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First order Bragg grating filters in silicon on insulator waveguides.

机译:绝缘体波导上的硅中的一阶布拉格光栅滤波器。

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摘要

The subject of this thesis is the design; analysis, fabrication and characterisation of first order Bragg Grating optical filters in Silicon-on-Insulator (SOI) planar waveguides. It is envisaged that this work will result in the possibility of Bragg Grating filters for use in Silicon Photonics. It is the purpose of the work to create as far as is possible flat surface waveguides so as to facilitate Thermo-Optic tuning and also the incorporation into rib-waveguide Silicon Photonics. The spectral response of the shallow Bragg Gratings was modelled using Coupled Mode Theory (CMT) by way of RSoft Gratingmod TM. Also the effect of having a Bragg Grating with alternate layers of refractive index 1.5 and 3.5 was simulated in order to verify that Silica and Silicon layered Bragg Gratings could be viable. A series of Bragg Gratings were patterned on 1.5 micron SOI at Philips in Eindhoven to investigate the variation of grating parameters with a) the period of the gratings b) the duty cycle (or mark to space ratio) of the gratings and c) the length of the region converted to Bragg Gratings (i.e. the number of grating period repetitions). One set of gratings were thermally oxidised at Philips in Eindhoven (this was to simulate the effects of oxidising Porous Silicon) and another set were ion implanted with Oxygen ions at the Ion Beam Facility, University of Surrey. The gratings were tested and found to give transmission minima at approximately 1540 nanometres and both methods of creating flat surfaces were found to give similar minima. Atomic Force Microscopy was applied to the grating area of the Ion as Implanted samples in the ATI, University of Surrey, which were found to have surface undulations in the order of 60 nanometres.
机译:本文的主题是设计。绝缘体上硅(SOI)平面波导中的一阶布拉格光栅光学滤波器的分析,制造和表征。可以预见,这项工作将导致在硅光子学中使用布拉格光栅滤光片的可能性。该工作的目的是尽可能多地创建平面波导,以便于进行热光调谐,以及将其结合到肋式波导硅光子学中。浅色布拉格光栅的光谱响应是通过RSoft Gratingmod TM使用耦合模式理论(CMT)建模的。还模拟了具有折射率为1.5和3.5的交替层的布拉格光栅的效果,以验证二氧化硅和硅层状的布拉格光栅是可行的。在埃因霍温飞利浦的1.5微米SOI上对一系列布拉格光栅进行构图,以研究光栅参数的变化,其中包括:a)光栅的周期b)光栅的占空比(或标记与空位比)和c)长度转换为布拉格光栅的区域的数量(即光栅周期的重复次数)。一组光栅在埃因霍温的飞利浦公司被热氧化(这是为了模拟氧化多孔硅的效果),另一组光栅在萨里大学的离子束设施中注入了氧离子。对光栅进行了测试,发现其在约1540纳米处的透射率极小,并且发现两种形成平坦表面的方法也具有相似的极小值。原子力显微镜在萨里大学ATI的植入样品上应用于离子的光栅区域,发现其表面起伏约为60纳米。

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    Waugh, Peter Michael.;

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